Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

A. V. Kolobov, P. Fons, M. Krbal, J. Tominaga, A. Giussani, K. Perumal, H. Riechert, R. Calarco, T. Uruga

研究成果: Article査読

7 被引用数 (Scopus)

抄録

GeTe is an end-point of the GeTe-Sb2Te3 quasibinary alloys often referred to as phase-change memory materials. The polycrystalline nature of the crystalline films used in devices and the concomitant presence of grain boundaries complicate detailed structural studies of the local structure. Recent progress in the epitaxial growth of phase-change materials offers unique possibilities for precise structural investigations. In this work, we report on results of x-ray absorption near-edge structure (XANES) studies of GeTe and Ge2Sb2Te5 epitaxial films grown on Si and InAs substrates with (100) and (111) orientations. The results show a strong dependence of the local structure on the substrate material and especially orientation and are discussed in conjunction with polycrystalline samples and ab-initio XANES simulations.

本文言語English
論文番号125308
ジャーナルJournal of Applied Physics
117
12
DOI
出版ステータスPublished - 2015 3 28
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Local structure of epitaxial GeTe and Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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