Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage

Alexander V. Kolobov, Alexander A. Shklyaev, Hiroyuki Oyanagi, Paul Fons, Satoshi Yamasaki, Masakazu Ichikawa

研究成果: Article

47 引用 (Scopus)

抜粋

We have investigated the local structure and photoluminescence properties of ultrasmall Ge islands grown on Si(111) covered with SiO2. Scanning electron microscopy and transmission electron microscopy measurements show that the islands have a hemispherical shape, and depending on the growth temperature, can be either epitaxial or nonepitaxial. X-ray absorption near-edge structure measurements demonstrate that the nonepitaxial islands have the local structure of bulk diamond Ge and are very stable towards oxidation. The epitaxial islands are found to be partly oxidized, but no alloying with the Si substrate is observed. The nonepitaxial islands exhibit a photoluminescence peaked at 2.3 eV, which is typical of Ge nanocrystals embedded in SiO2. Possible mechanisms for the stability of the nonepitaxial Ge islands towards oxidation are discussed.

元の言語English
ページ(範囲)2563-2565
ページ数3
ジャーナルApplied Physics Letters
78
発行部数17
DOI
出版物ステータスPublished - 2001 4 23
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント Local structure of Ge nanoislands on Si(111) surfaces with a SiO<sub>2</sub> coverage' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kolobov, A. V., Shklyaev, A. A., Oyanagi, H., Fons, P., Yamasaki, S., & Ichikawa, M. (2001). Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage. Applied Physics Letters, 78(17), 2563-2565. https://doi.org/10.1063/1.1367287