Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

Michio Watanabe, Kohei M. Itoh, Youiti Ootuka, Eugene E. Haller

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We have determined the localization length (Formula presented) and the impurity dielectric susceptibility (Formula presented) as a function of Ga acceptor concentrations (N) in nominally uncompensated (Formula presented) just below the critical concentration (Formula presented) for the metal-insulator transition. Both (Formula presented) and (Formula presented) diverge at (Formula presented) according to the functions (Formula presented) and (Formula presented) respectively, with (Formula presented) and (Formula presented) for (Formula presented) Outside of this region (Formula presented) the values of the exponents drop to (Formula presented) and (Formula presented) The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at (Formula presented).

本文言語English
ページ(範囲)R2255-R2258
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
62
4
DOI
出版ステータスPublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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