Location of P and As dopants and p-type doping of ZnO

P. Fons, A. V. Kolobov, Junji Tominaga, Bérangère Hyot, Bernard André

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Although ZnO has long been touted as an excellent material for UV light-emitting diodes and lasers, p-type doping still remains a challenge. In recent reports claiming that p-type doping can be achieved using nitrogen, arsenic and phosphorus, the spatial location of the dopants in the "successful" samples has not been identified. In this work, we present simulation results of x- ray absorption spectra for different locations of p-type dopants and argue that this technique is a powerful tool to experimentally investigate the location of group V dopants and to establish a correlation between the dopant location and corresponding conductivity type.

本文言語English
ページ(範囲)1-5
ページ数5
ジャーナルJournal of Optoelectronics and Advanced Materials
16
1-2
出版ステータスPublished - 2014 1 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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