抄録
Although ZnO has long been touted as an excellent material for UV light-emitting diodes and lasers, p-type doping still remains a challenge. In recent reports claiming that p-type doping can be achieved using nitrogen, arsenic and phosphorus, the spatial location of the dopants in the "successful" samples has not been identified. In this work, we present simulation results of x- ray absorption spectra for different locations of p-type dopants and argue that this technique is a powerful tool to experimentally investigate the location of group V dopants and to establish a correlation between the dopant location and corresponding conductivity type.
本文言語 | English |
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ページ(範囲) | 1-5 |
ページ数 | 5 |
ジャーナル | Journal of Optoelectronics and Advanced Materials |
巻 | 16 |
号 | 1-2 |
出版ステータス | Published - 2014 1月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 凝縮系物理学
- 電子工学および電気工学