Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Takasumi Tanabe; Katsuhiko Nishiguchi; Eiichi Kuramochi; Masaya Notomi

doi:10.1364/OE.17.022505

Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Takasumi Tanabe, Katsuhiko Nishiguchi, Eiichi Kuramochi, Masaya Notomi

研究成果: Article › 査読

109 被引用数 (Scopus)

抄録

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electrooptic modulation in a silicon chip. GHz operation is demonstrated at a very low (μ W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

本文言語	English
ページ（範囲）	22505-22513
ページ数	9
ジャーナル	Optics Express
巻	17
号	25
DOI	https://doi.org/10.1364/OE.17.022505
出版ステータス	Published - 2009 12月 7
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学

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10.1364/OE.17.022505

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Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

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