Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Takasumi Tanabe, Katsuhiko Nishiguchi, Eiichi Kuramochi, Masaya Notomi

研究成果: Article査読

104 被引用数 (Scopus)

抄録

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electrooptic modulation in a silicon chip. GHz operation is demonstrated at a very low (μ W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

本文言語English
ページ(範囲)22505-22513
ページ数9
ジャーナルOptics Express
17
25
DOI
出版ステータスPublished - 2009 12 7
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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