Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films

Shigefusa Chichibu, Sho Shirakata, Ryo Sudo, Mei Uchida, Yoshiyuki Harada, Satoru Matsumoto, Hirofumi Higuchi, Shigehiro Isomura

研究成果: Article

7 引用 (Scopus)

抜粋

A low-pressure metalorganic chemical vapor deposition of CuAlSe2 epitaxial films was performed using several kinds of metalorganic precursors. The film quality varied remarkably depending on the source precursors. Free exciton emission at 2.739 eV was observed in the CuAlSe2 films grown using triisobutylaluminium and diethylselenium, both ofwhich have lower decomposition temperatures.

元の言語English
ページ(範囲)139-141
ページ数3
ジャーナルJapanese journal of applied physics
32
発行部数S3
DOI
出版物ステータスPublished - 1993 1

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Chichibu, S., Shirakata, S., Sudo, R., Uchida, M., Harada, Y., Matsumoto, S., Higuchi, H., & Isomura, S. (1993). Low-pressure metalorganic chemical vapor deposition of cualse2 epitaxial films. Japanese journal of applied physics, 32(S3), 139-141. https://doi.org/10.7567/JJAPS.32S3.139