Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing

Daisuke Yokoyama, Takayuki Iwasaki, Tsuyoshi Yoshida, Hiroshi Kawarada, Shintaro Sato, Takashi Hyakushima, Mizuhisa Nihei, Yuji Awano

研究成果: Article査読

103 被引用数 (Scopus)

抄録

Vertically aligned multiwalled carbon nanotubes (MWCNTs) were synthesized by remote plasma chemical vapor deposition at a low temperature of 390 °C, which meets the requirement of the large scale integration (LSI) process. For wiring application, we measured the electrical properties of MWCNT-via structures with and without chemical mechanical polishing (CMP). The via resistances were reduced using inner shells of MWCNTs whose caps were opened due to CMP. The improved resistance after annealing at 400 °C was 0.6 for 2 μm vias. Our process is suitable for LSI because the temperature never exceeds the allowable temperature of 400 °C in the Si LSI process.

本文言語English
論文番号263101
ジャーナルApplied Physics Letters
91
26
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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