Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots

Takuya Matsumoto, Motoichi Ohtsu, Kazunari Matsuda, Toshiharu Saiki, Hideaki Saito, Kenichi Nishi

研究成果: Article査読

28 被引用数 (Scopus)

抄録

Nonlinear absorption spectroscopy of InGaAs single quantum dots (QDs) was realized by means of a low-temperature near-field optical microscope. The spatial distribution of the nonlinear absorption change in single QDs was determined. The dependence of the nonlinear absorption change on the pump power density demonstrates that the nonlinearity originates from the state filling of the ground state. The nonlinear absorption spectrum showed a homogeneous broadening of the ground state of about 5 meV. Furthermore, the change in the absorption cross section of the single QD when the ground state is saturated with carriers is estimated to be 2.8±0.6nm2, which agrees with the result predicted on the basis of theoretical consideration.

本文言語English
ページ(範囲)3246-3248
ページ数3
ジャーナルApplied Physics Letters
75
21
DOI
出版ステータスPublished - 1999 11 22
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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