抜粋
Nonlinear absorption spectroscopy of InGaAs single quantum dots (QDs) was realized by means of a low-temperature near-field optical microscope. The spatial distribution of the nonlinear absorption change in single QDs was determined. The dependence of the nonlinear absorption change on the pump power density demonstrates that the nonlinearity originates from the state filling of the ground state. The nonlinear absorption spectrum showed a homogeneous broadening of the ground state of about 5 meV. Furthermore, the change in the absorption cross section of the single QD when the ground state is saturated with carriers is estimated to be 2.8±0.6nm2, which agrees with the result predicted on the basis of theoretical consideration.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 3246-3248 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 75 |
| 発行部数 | 21 |
| DOI | |
| 出版物ステータス | Published - 1999 11 22 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
フィンガープリント Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Matsumoto, T., Ohtsu, M., Matsuda, K., Saiki, T., Saito, H., & Nishi, K. (1999). Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots. Applied Physics Letters, 75(21), 3246-3248. https://doi.org/10.1063/1.125313