Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

Tsutomu Iida, Yunosuke Makita, Stefan Winter, Shinji Kimura, Yushin Tsai, Yoko Kawasumi, Paul Fons, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Shin ichiro Uekusa, Takeyo Tsukamoto

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

C-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30-500 eV) energies (EC(+)) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC(+) for EC(+) lower than 170 eV. It was explicitly demonstrated that the most effective EC(+) to establish highest activation rate is located at approx.170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC(+). This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration (| NA-ND |) for EC(+)=170 eV. For EC(+) higher than approx.170 eV, increasing EC(+) was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC(+).

本文言語English
ホスト出版物のタイトルMaterials Synthesis and Processing Using Ion Beams
編集者Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
出版社Publ by Materials Research Society
ページ1029-1034
ページ数6
ISBN(印刷版)1558992154
出版ステータスPublished - 1994 1 1
外部発表はい
イベントProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
継続期間: 1993 11 291993 12 3

出版物シリーズ

名前Materials Research Society Symposium Proceedings
316
ISSN(印刷版)0272-9172

Conference

ConferenceProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period93/11/2993/12/3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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