Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Toshiyuki Ihara, Hirotake Itoh, Hidefumi Akiyama, Loren Pfeiffer, Ken West, Kirk Baldwin

研究成果: Article

2 引用 (Scopus)

抄録

A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14 x 6nm2 combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-μm-long Fabry-Perot cavity coatedby high-reflectivity thin metals.

元の言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
46
発行部数12-16
DOI
出版物ステータスPublished - 2007 4 13
外部発表Yes

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Semiconductor quantum wires
Laser modes
quantum wires
threshold currents
aluminum gallium arsenides
lasing
injection
Lasers
Quantum efficiency
lasers
quantum efficiency
reflectance
cavities
output
Metals
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires. / Liu, Shu Man; Yoshita, Masahiro; Okano, Makoto; Ihara, Toshiyuki; Itoh, Hirotake; Akiyama, Hidefumi; Pfeiffer, Loren; West, Ken; Baldwin, Kirk.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 46, 番号 12-16, 13.04.2007.

研究成果: Article

Liu, Shu Man ; Yoshita, Masahiro ; Okano, Makoto ; Ihara, Toshiyuki ; Itoh, Hirotake ; Akiyama, Hidefumi ; Pfeiffer, Loren ; West, Ken ; Baldwin, Kirk. / Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires. :: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; 巻 46, 番号 12-16.
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AU - Liu, Shu Man

AU - Yoshita, Masahiro

AU - Okano, Makoto

AU - Ihara, Toshiyuki

AU - Itoh, Hirotake

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren

AU - West, Ken

AU - Baldwin, Kirk

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