Machinability investigation of reaction-bonded silicon carbide by single-point diamond turning

Zhiyu Zhang, Jiwang Yan, Tsunemoto Kuriyagawa

研究成果: Article

5 引用 (Scopus)

抄録

Reaction-bonded silicon carbide (RB-SiC) is a recently developed ceramic material with many merits such as low manufacturing temperature, dense structure, high purity and low cost. In the present paper, the precision machinability of RB-SiC was studied by microindentation and single-point diamond turning (SPDT) tests. The influence of depth of cut and tool feed rate on surface roughness and cutting force was investigated. Results showed that there was no clear ductile-brittle transition in machining behavior. The material removal mechanism involves falling of the SiC grains and intergranular microfractures of the bonding silicon, which prevents from large-scale cleavage fractures. The minimum surface roughness depends on the initial material microstructure in terms of sizes of the SiC grains and micro pores. This work preliminarily indicates that SPDT can be used as a high-efficiency machining process for RB-SiC.

元の言語English
ページ(範囲)151-156
ページ数6
ジャーナルKey Engineering Materials
389-390
DOI
出版物ステータスPublished - 2009
外部発表Yes

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Diamond
Machinability
Silicon carbide
Diamonds
Machining
Surface roughness
Silicon
Ceramic materials
Microstructure
Costs
Temperature
silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Machinability investigation of reaction-bonded silicon carbide by single-point diamond turning. / Zhang, Zhiyu; Yan, Jiwang; Kuriyagawa, Tsunemoto.

:: Key Engineering Materials, 巻 389-390, 2009, p. 151-156.

研究成果: Article

@article{d4a5c577952c4366bbe03fee03dcc00f,
title = "Machinability investigation of reaction-bonded silicon carbide by single-point diamond turning",
abstract = "Reaction-bonded silicon carbide (RB-SiC) is a recently developed ceramic material with many merits such as low manufacturing temperature, dense structure, high purity and low cost. In the present paper, the precision machinability of RB-SiC was studied by microindentation and single-point diamond turning (SPDT) tests. The influence of depth of cut and tool feed rate on surface roughness and cutting force was investigated. Results showed that there was no clear ductile-brittle transition in machining behavior. The material removal mechanism involves falling of the SiC grains and intergranular microfractures of the bonding silicon, which prevents from large-scale cleavage fractures. The minimum surface roughness depends on the initial material microstructure in terms of sizes of the SiC grains and micro pores. This work preliminarily indicates that SPDT can be used as a high-efficiency machining process for RB-SiC.",
keywords = "Diamond turning, Ductile machining, Machinability, Reaction-bonded silicon carbide",
author = "Zhiyu Zhang and Jiwang Yan and Tsunemoto Kuriyagawa",
year = "2009",
doi = "10.4028/0-87849-364-6.151",
language = "English",
volume = "389-390",
pages = "151--156",
journal = "Key Engineering Materials",
issn = "1013-9826",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Machinability investigation of reaction-bonded silicon carbide by single-point diamond turning

AU - Zhang, Zhiyu

AU - Yan, Jiwang

AU - Kuriyagawa, Tsunemoto

PY - 2009

Y1 - 2009

N2 - Reaction-bonded silicon carbide (RB-SiC) is a recently developed ceramic material with many merits such as low manufacturing temperature, dense structure, high purity and low cost. In the present paper, the precision machinability of RB-SiC was studied by microindentation and single-point diamond turning (SPDT) tests. The influence of depth of cut and tool feed rate on surface roughness and cutting force was investigated. Results showed that there was no clear ductile-brittle transition in machining behavior. The material removal mechanism involves falling of the SiC grains and intergranular microfractures of the bonding silicon, which prevents from large-scale cleavage fractures. The minimum surface roughness depends on the initial material microstructure in terms of sizes of the SiC grains and micro pores. This work preliminarily indicates that SPDT can be used as a high-efficiency machining process for RB-SiC.

AB - Reaction-bonded silicon carbide (RB-SiC) is a recently developed ceramic material with many merits such as low manufacturing temperature, dense structure, high purity and low cost. In the present paper, the precision machinability of RB-SiC was studied by microindentation and single-point diamond turning (SPDT) tests. The influence of depth of cut and tool feed rate on surface roughness and cutting force was investigated. Results showed that there was no clear ductile-brittle transition in machining behavior. The material removal mechanism involves falling of the SiC grains and intergranular microfractures of the bonding silicon, which prevents from large-scale cleavage fractures. The minimum surface roughness depends on the initial material microstructure in terms of sizes of the SiC grains and micro pores. This work preliminarily indicates that SPDT can be used as a high-efficiency machining process for RB-SiC.

KW - Diamond turning

KW - Ductile machining

KW - Machinability

KW - Reaction-bonded silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=58149502786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149502786&partnerID=8YFLogxK

U2 - 10.4028/0-87849-364-6.151

DO - 10.4028/0-87849-364-6.151

M3 - Article

AN - SCOPUS:58149502786

VL - 389-390

SP - 151

EP - 156

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

ER -