Magnetic flux and gate-voltage dependence of Kondo effect in quantum dot embedded in Aharonov-Bohm ring

R. Yoshii, M. Eto

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The Kondo effect is examined in a quantum dot embedded in an Aharonov-Bohm (AB) ring, based on the Haldane's two-stage scaling theory. In the small limit of the ring size, we derive analytical expressions for the Kondo temperature TK and conductance at temperatures T ≫ TK, as functions of the magnetic flux penetrating the ring. The flux dependence of TK is drastically changed when the energy level in the quantum dot is tuned electrostatically using the gate electrode attached to the dot. TK hardly depends on the flux at the midpoint in the Kondo valley of the Coulomb oscillation, whereas its flux dependence becomes remarkable apart from the midpoint.

本文言語English
ページ(範囲)856-859
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
42
4
DOI
出版ステータスPublished - 2010 2月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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