Measurement of energetic and lateral distribution of interface state density in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect Transistors

Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A new modification of the charge pumping (CP) technique based on the effect of reverse pulse bias on suppression of the geometric component is proposed in order to accurately determine the energetic and lateral distribution of interface state density (Dit) in fully-depleted silicon on insulator metal-oxide-semiconductor field-effect transistors (FD SOI MOSFETs). A comparison of the conventional CP techniques with the proposed method is also presented. It is demonstrated that using the proposed method, the precise estimation of the energetic and lateral distribution of Dit can be simply obtained without interference from the geometry-dependent effect which often leads to the great difficulties in data interpretation in the conventional CP methods.

本文言語English
ページ(範囲)2496-2500
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
4 B
DOI
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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