Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates

E. Pelucchi, S. Watanabe, K. Leifer, Q. Zhu, B. Dwir, P. De Los Rios, E. Kapon

研究成果: Article査読

50 被引用数 (Scopus)

抄録

A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing.

本文言語English
ページ(範囲)1282-1285
ページ数4
ジャーナルNano Letters
7
5
DOI
出版ステータスPublished - 2007 5月
外部発表はい

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学

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