Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates

E. Pelucchi, S. Watanabe, K. Leifer, Q. Zhu, B. Dwir, P. De Los Rios, E. Kapon

研究成果: Article

48 引用 (Scopus)

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A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing.

元の言語English
ページ(範囲)1282-1285
ページ数4
ジャーナルNano Letters
7
発行部数5
DOI
出版物ステータスPublished - 2007 5 1
外部発表Yes

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ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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