Memory function approach to in-plane anisotropic resistivity in the antiferromagnetic phase of iron arsenide superconductors

Koudai Sugimoto, Peter Prelovšek, Eiji Kaneshita, Takami Tohyama

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We theoretically examine anisotropy of in-plane resistivity in the striped antiferromagnetic phase of an iron arsenide superconductor by applying a memory function approach to the ordered phase with isotropic nonmagnetic impurity. We find that the anisotropy of the scattering rate is independent of carrier density when the topology of the Fermi surface is changed after the introduction of holes. On the other hand, the anisotropy of the Drude weight monotonically decreases reflecting the distortion of the Dirac Fermi surface and eventually leads to the reverse of anisotropy of resistivity, being consistent with experiment. The origin of the anisotropy is thus attributed to the interplay of impurity scattering and anisotropic electronic states.

本文言語English
論文番号125157
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
90
12
DOI
出版ステータスPublished - 2014 9月 30
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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