Microstructure and annealing behavior of heavily neutron-irradiated β-SiC

T. Yano, T. Suzuki, T. Maruyama, T. Iseki

研究成果: Article査読

31 被引用数 (Scopus)

抄録

TEM studies were carried out on sintered β-SiC specimens which were irradiated in fast breeder reactors up to 1.0 × 1027 n/m2 (E > 0.1 MeV) at temperatures around 500°C. In SiC grains irradiated to 10 × 1025 to 10 × 1026 n/m2, unresolvable small black dots of 2 to 5 nm in size were observed. Change in microstructure occurred in the specimens irradiated to fluerices higher than 4.8 × 1026 n/m2. Clear straight line contrast of dislocations 10 to 30 nm in length was observed, which might be Frank-type interstitial dislocation loops, lying on {111} planes. The size of defects was increased with increasing neutron fluence. Postirradiation annealing of specimens resulted in an increase in size and a decrease in the number density of defects. No void was observed. It is suggested that the dislocation loops observed in this experiment are not the cause of irradiation-induced swelling of SiC.

本文言語English
ページ(範囲)311-314
ページ数4
ジャーナルJournal of Nuclear Materials
155-157
PART 1
DOI
出版ステータスPublished - 1988 7 2
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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