Modeling of plasmas for dry etching in ULSI technologies

Z. Lj Petrovic, S. Sakadzic, Z. M. Raspopovic, T. Makabe

研究成果: Conference contribution

抄録

In this paper we give a review of some of the recent results obtained in modeling of radio frequency (RF) plasmas used for plasma processing. Decreasing sizes of structures that are being processed gives rise to topography dependent etching, which poses a problem for designing plasma reactors. In this paper we discuss how some recently derived characteristics of particle transport may be incorporated in models of such plasmas especially having in mind the search for improvement of plasma reactors to avoid topography dependent etching efficiency due to the high aspect ratio of microelectronic device structures.

本文言語English
ホスト出版物のタイトル2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
出版社IEEE
ページ433-436
ページ数4
ISBN(印刷版)0780352351, 9780780352353
DOI
出版ステータスPublished - 1999 1 1
イベント22nd International Conference on Microelectronics (MIEL 2000) - Nis, Yugoslavia
継続期間: 2000 5 142000 5 17

出版物シリーズ

名前2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
2

Conference

Conference22nd International Conference on Microelectronics (MIEL 2000)
CityNis, Yugoslavia
Period00/5/1400/5/17

ASJC Scopus subject areas

  • 工学(全般)

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