In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared afterAr+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1994 1月 1|
|イベント||Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA|
継続期間: 1994 4月 4 → 1994 4月 8
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