Modification of sol-gel thin films by ion implantation

Hiroshi Hirashima, Kenji Adachi, Hiroaki Imai

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared afterAr+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

本文言語English
ページ(範囲)183-188
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
346
DOI
出版ステータスPublished - 1994 1月 1
イベントProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
継続期間: 1994 4月 41994 4月 8

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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