In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the 1R absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-0 bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.
|ジャーナル||Proceedings of SPIE - The International Society for Optical Engineering|
|出版ステータス||Published - 1994 10月 13|
|イベント||Sol-Gel Optics III 1994 - San Diego, United States|
継続期間: 1994 7月 24 → 1994 7月 29
ASJC Scopus subject areas
- コンピュータ サイエンスの応用