Modification of sol-gel thin films by ion implantation

Hiroshi Hirashima, Kenji Adachi, Hiroaki Imai

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the 1R absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-0 bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

本文言語English
ページ(範囲)33-40
ページ数8
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
2288
DOI
出版ステータスPublished - 1994 10月 13
イベントSol-Gel Optics III 1994 - San Diego, United States
継続期間: 1994 7月 241994 7月 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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