Modulation of thermoelectric power factor via radial dopant inhomogeneity in B-doped Si nanowires

Fuwei Zhuge, Takeshi Yanagida, Naoki Fukata, Ken Uchida, Masaki Kanai, Kazuki Nagashima, Gang Meng, Yong He, Sakon Rahong, Xiaomin Li, Tomoji Kawai

    研究成果: Article査読

    13 被引用数 (Scopus)

    抄録

    We demonstrate a modulation of thermoelectric power factor via a radial dopant inhomogeneity in B-doped Si nanowires. These nanowires grown via vapor-liquid-solid (VLS) method were naturally composed of a heavily doped outer shell layer and a lightly doped inner core. The thermopower measurements for a single nanowire demonstrated that the power factor values were higher than those of homogeneously B-doped Si nanowires. The field effect measurements revealed the enhancement of hole mobility for these VLS grown B-doped Si nanowires due to the modulation doping effect. This mobility enhancement increases overall electrical conductivity of nanowires without decreasing the Seebeck coefficient value, resulting in the increase of thermoelectric power factor. In addition, we found that tailoring the surface dopant distribution by introducing surface d-doping can further increase the power factor value. Thus, intentionally tailoring radial dopant inhomogeneity promises a way to modulate the thermoelectric power factor of semiconductor nanowires.

    本文言語English
    ページ(範囲)14100-14106
    ページ数7
    ジャーナルJournal of the American Chemical Society
    136
    40
    DOI
    出版ステータスPublished - 2014 10 8

    ASJC Scopus subject areas

    • Catalysis
    • Chemistry(all)
    • Biochemistry
    • Colloid and Surface Chemistry

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