Molecular beam epitaxial growth of CuGaSe2 films

A. Yamada, P. J. Makita, S. Niki, P. J. Fons, A. Obara

研究成果: Article査読

抄録

Cu-Ga-Se films of various compositions were prepared by MBE technique. The films were examined by reflection high energy electron diffraction, electron probe for micro analysis, X-ray diffraction and photoluminescence. The valence stoichiometry of the films is fulfilled at unity molecularity, showing that CuGaSe2 is possible to be grown by MBE. The stoichiometry is almost conserved in a wide range of molecularity of the films. The films have chalcopyrite structure over a remarkably wide range of Cu-rich composition. They grow epitaxially on [001] oriented GaAs substrates with the c-axis perpendicular to the substrate surface. The low temperature photoluminescence from epitaxially grown films of nearly stoichiometric and Cu-rich composition show sharp emissions peaked at 1.71eV attributable to exciton recombination indicating high quality of the films.

本文言語English
ページ(範囲)33-38
ページ数6
ジャーナルDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
60
3
出版ステータスPublished - 1996 1 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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