Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE

M. Kitabatake, P. Fons, J. E. Greene

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.

本文言語English
ページ(範囲)870-875
ページ数6
ジャーナルJournal of Crystal Growth
111
1-4
DOI
出版ステータスPublished - 1991 5月 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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