抄録
A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.
本文言語 | English |
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ページ(範囲) | 20-21 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 19 |
号 | 1 |
DOI | |
出版ステータス | Published - 1983 1月 6 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学