抄録
A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 20-21 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 19 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 1983 1月 6 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学