Monte Carlo Simulation of AlGaAs/GaAs Hetero junction Bipolar Transistors

K. Tomizawa, Y. Awano, K. Tomizawa, Y. Awano, N. Hashizume

研究成果: Article査読

54 被引用数 (Scopus)

抄録

A first demonstration of one-dimensional Monte Carlo simulations of AlGaAs/GaAs heterojunction bipolar transistors is reported. The electron motion is solved by a particle model, while the hole motion is solved by a conventional hydrodynamic model. It is shown that the compositional grading of AlxGa1-xAs in the base region is effective to cause the ballistic acceleration of electrons in the base region, resulting in a high collector current density of above 1 mA/µm2. The current-gain cutoff frequency fT reaches 150 GHz if the size of a transistor is properly designed. Also shown is the relation between the device performances and the electron dynamics investigated.

本文言語English
ページ(範囲)362-364
ページ数3
ジャーナルIEEE Electron Device Letters
5
9
DOI
出版ステータスPublished - 1984 9
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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