抄録
A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.
本文言語 | English |
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ページ(範囲) | 1067-1069 |
ページ数 | 3 |
ジャーナル | Electronics Letters |
巻 | 18 |
DOI | |
出版ステータス | Published - 1982 12月 9 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学