Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode

K. Tomizawa; Y. Awano; N. Hashizume; F. Suzuki

doi:10.1049/el:19820731

Monte Carlo simulation of GaAs submicron n⁺-n-n⁺ diode with GaAlAs heterojunction cathode

K. Tomizawa, Y. Awano, N. Hashizume, F. Suzuki

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga_1-xAl_xAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.

本文言語	English
ページ（範囲）	1067-1069
ページ数	3
ジャーナル	Electronics Letters
巻	18
DOI	https://doi.org/10.1049/el:19820731
出版ステータス	Published - 1982 12月 9
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1049/el:19820731

他のファイルとリンク

引用スタイル

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abstract = "A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.",

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AU - Tomizawa, K.

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AU - Hashizume, N.

AU - Suzuki, F.

PY - 1982/12/9

Y1 - 1982/12/9

N2 - A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.

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KW - Electron mobility

KW - Monte Carlo methods

KW - Semiconductor devices and materials

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