MONTE CARLO SIMULATION OF SUBMICRON GaAs n + -i(n)-n + DIODE.

K. Tomizawa, Y. Awano, N. Hashizume, M. Kawashima

研究成果: Article査読

30 被引用数 (Scopus)

抄録

Monte Carlo simulation of electron transport in a GaAs diode, of n** plus -i(n)-n** plus structure, with a 0. 25 mu m- or 0. 5 mu m-long active layer is described. The anode voltage ranges from 0. 25 to 1. 0 v. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field, potenital, and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0. 25 mu m-long diode and the importance of the back-scattering of electrons from the anode n** plus -layer are discussed. The effects of the lattice temperature and doping on the length of the active layer, and a comparison with a Si diode are considered.

本文言語English
ページ(範囲)131-136
ページ数6
ジャーナルIEE Proceedings I: Solid State and Electron Devices
129
4
DOI
出版ステータスPublished - 1982 1 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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