Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits

Yuji Awano, Yukio Tagawa, Masashi Shima

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 μm devices show that, under the electric field of 100 KV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.

本文言語English
ページ408-414
ページ数7
出版ステータスPublished - 1995 12月 1
外部発表はい
イベントProceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
継続期間: 1995 8月 71995 8月 9

Other

OtherProceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period95/8/795/8/9

ASJC Scopus subject areas

  • 電子工学および電気工学

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