抄録
In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 μm devices show that, under the electric field of 100 KV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.
| 本文言語 | English |
|---|---|
| ページ | 408-414 |
| ページ数 | 7 |
| 出版ステータス | Published - 1995 12月 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA 継続期間: 1995 8月 7 → 1995 8月 9 |
Other
| Other | Proceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits |
|---|---|
| City | Ithaca, NY, USA |
| Period | 95/8/7 → 95/8/9 |
ASJC Scopus subject areas
- 電子工学および電気工学