More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Shigeki Kobayashi; Masumi Saitoh; Ken Uchida

doi:10.1109/IEDM.2007.4419044

More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

研究成果: Conference article › 査読

14 被引用数 (Scopus)

抄録

Hole mobility (μ_h) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (T_SOI) is investigated. It is found μ_h in DG mode (μ_DG) is greatly enhanced in all the measured T_SOI in comparison with single gate mode. μ_DG of sub-10nm T_SOI exceeds even the universal mobility at high surface carrier densities. The higher μ_DG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μ_DG is further enhanced by uniaxial stress.

本文言語	English
論文番号	4419044
ページ（範囲）	707-710
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting, IEDM
DOI	https://doi.org/10.1109/IEDM.2007.4419044
出版ステータス	Published - 2007 12月 1
イベント	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States 継続期間: 2007 12月 10 → 2007 12月 12

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2007.4419044

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引用スタイル

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abstract = "Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.",

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