N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Kei Noda, Shinji Tanida, Hiroshi Kawabata, Kazumi Matsushige

研究成果: Article査読

8 被引用数 (Scopus)

抄録

N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10-2 cm2/(V s) and 0.21 cm2/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages.

本文言語English
ページ(範囲)83-87
ページ数5
ジャーナルSynthetic Metals
160
1-2
DOI
出版ステータスPublished - 2010 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 材料力学
  • 機械工学
  • 金属および合金
  • 材料化学

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