抄録
N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO2 surface.
本文言語 | English |
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ページ(範囲) | 571-574 |
ページ数 | 4 |
ジャーナル | Thin Solid Films |
巻 | 518 |
号 | 2 |
DOI | |
出版ステータス | Published - 2009 11月 30 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 表面および界面
- 表面、皮膜および薄膜
- 金属および合金
- 材料化学