Nano-structure Ge formed in thin film SiO2 using ion implantation

J. R. Phillips, Olof C. Hellman, N. Kobayashi, Yunosuke Makita, Hajime Shibata, A. Yamada, P. Fons, Yushin Tsai, Shigeru Niki, Masataka Hasegawa, Tsutomu Iida

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

The preparation of amorphous insulating films containing nanometer-scaled structures of semiconductors has attracted increased attention since the observation of room temperature emission of light from films containing indirect-bandgap semiconductors such as Ge and Si. While most experimental reports on these Si and Ge nano-scale structures have been based on thin films created using sputter-deposition, in this study we have used conventional ion implantation of Ge to create the non-equilibrium mixture of materials that, upon annealing, develops a nano-crystallite phase embedded in the amorphous matrix. The presence of clusters that are difficult to image in TEM, in addition to microcrystallites, is an issue of interest since the source of light emission is still controversial. The second phase is formed from excess amounts of the semiconductor, in this case added by implantation. In this paper the formation and size distribution of the Ge nano-structures was characterized using Raman scattering and transmission electron microscopy (TEM). Similarly to reported sputtered film results, Raman spectra suggest Ge clusters that are not well formed crystallites may be present for anneals at low temperatures and in unannealed films. For annealing temperatures exceeding 600°C, a mixture of amorphous-like clustering and nano-crystallites may result, depending on the volume fraction of Ge. For low dose samples it was found that temperature and time of annealing could be used to manipulate the nucleation behavior of the nano-crystallites.

本文言語English
ホスト出版物のタイトルMaterials Synthesis and Processing Using Ion Beams
編集者Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
出版社Publ by Materials Research Society
ページ475-480
ページ数6
ISBN(印刷版)1558992154
出版ステータスPublished - 1994 1月 1
外部発表はい
イベントProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
継続期間: 1993 11月 291993 12月 3

出版物シリーズ

名前Materials Research Society Symposium Proceedings
316
ISSN(印刷版)0272-9172

Conference

ConferenceProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period93/11/2993/12/3

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Nano-structure Ge formed in thin film SiO2 using ion implantation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル