Nano-structure Ge formed in thin film SiO₂ using ion implantation

Engineering & Materials Science

• Crystallites 100%
• Ion implantation 94%
• Thin films 65%
• Annealing 51%
• Raman scattering 50%
• Semiconductor materials 46%
• Transmission electron microscopy 35%
• Sputter deposition 28%
• Temperature 27%
• Light emission 27%
• Energy gap 19%
• Nucleation 18%
• Volume fraction 15%

Chemical Compounds

• Ion Implantation 84%
• Nanomaterial 43%
• Annealing 41%
• Semiconductor 39%
• Liquid Film 33%
• Microcrystallites 25%
• Sputter Deposition 24%
• Amorphous Material 24%
• Transmission Electron Microscopy 22%
• Molecular Cluster 22%
• Nonequilibrium 18%
• Size Distribution 15%
• Mixture 15%
• Crystallite 14%
• Nucleation 14%
• Raman Spectrum 14%
• Dose 13%
• Volume 10%
• Ambient Reaction Temperature 9%
• Amount 7%
• Time 6%

Physics & Astronomy

• ion implantation 63%
• crystallites 61%
• thin films 35%
• annealing 31%
• Raman spectra 26%
• transmission electron microscopy 22%
• light emission 16%
• implantation 15%
• nucleation 12%
• preparation 12%
• dosage 11%
• temperature 10%
• room temperature 9%
• matrices 9%