Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices

Jan H. Richter, Alexander V. Kolobov, Paul Fons, Xiaomin Wang, Kirill V. Mitrofanov, Junji Tominaga, Hitoshi Osawa, Motohiro Suzuki

研究成果: Conference contribution

抄録

We report on the study of single devices of phase-change (Ge 2Sb2Te5) memory cells in line cell type devices. Devices were investigated employing an x-ray nanobeam of only about 150 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell. XANES spectra showing the device in the amorphous and crystalline state have been successfully collected after switching the device in situ at the synchrotron. By monitoring the fluorescence response of the sample constituent materials at a constant photon energy (corresponding to the Ge K-edge absorption edge) as a function of x-ray beam position on the sample 2D maps have been produced.

本文言語English
ホスト出版物のタイトルPhase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications
出版社Materials Research Society
ページ1-5
ページ数5
ISBN(印刷版)9781632661456
DOI
出版ステータスPublished - 2013 1 1
外部発表はい
イベント2013 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2013 4 12013 4 5

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1563
ISSN(印刷版)0272-9172

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/113/4/5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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