Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

Ryuji Ohba, Shin ichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

    研究成果: Conference article査読

    4 被引用数 (Scopus)


    We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.

    ジャーナルTechnical Digest - International Electron Devices Meeting
    出版ステータスPublished - 2003 12 1
    イベントIEEE International Electron Devices Meeting - Washington, DC, United States
    継続期間: 2003 12 82003 12 10

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学


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