Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics

Y. Shi, X. L. Yuan, S. L. Gu, R. Zhang, Y. D. Zheng, K. Saito, H. Ishikuro, T. Hiramoto

研究成果: Paper査読

抄録

The charge storage characteristics of MOSFETs with various channel dimensions were investigated in the temperature range of 20-300 K. Single charge/discharge processes are observed in the device with the narrowest channel. Furthermore, novel structures for improving the charge retention performance is discussed.

本文言語English
ページ136-137
ページ数2
出版ステータスPublished - 1999
外部発表はい
イベントProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
継続期間: 1999 6月 281999 6月 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

ASJC Scopus subject areas

  • 工学(全般)

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