The charge storage characteristics of MOSFETs with various channel dimensions were investigated in the temperature range of 20-300 K. Single charge/discharge processes are observed in the device with the narrowest channel. Furthermore, novel structures for improving the charge retention performance is discussed.
|出版ステータス||Published - 1999|
|イベント||Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA|
継続期間: 1999 6月 28 → 1999 6月 30
|Other||Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)|
|City||Santa Barbara, CA, USA|
|Period||99/6/28 → 99/6/30|
ASJC Scopus subject areas