Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures

Yoshihiro Sugiyama, Yoshiaki Nakata, Toshiro Futatsugi, Mitsuru Sugawara, Yuji Awano, Naoki Yokoyama

    研究成果: Article査読

    41 被引用数 (Scopus)

    抄録

    We report an effect of interval layer thickness in stacked InAs self-assembled quantum dot (QD) structures on photoluminescecnce (PL) characteristics focusing on thicknesses less than 3 nm. A drastic decrease in PL line width as narrow as 21meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. This attributes to the decrease of PL line width governed by the fluctuation mainly in the vertical direction. PL from higher order quantized states up to the 4th state are also clearly observed.

    本文言語English
    ページ(範囲)L158-L161
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    36
    2 PART A
    DOI
    出版ステータスPublished - 1997 2 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(その他)
    • 物理学および天文学(全般)

    フィンガープリント

    「Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル