Natural ordering of ZnO1-xSex grown by radical source MBE

K. Iwata, A. Yamada, P. Fons, K. Matsubara, S. Niki

研究成果: Conference contribution

抄録

Technology for growth of ZnO wide bandgap semiconductor crystal has improved greatly using RS (radical source)-MBE. Recently, ZnO is now gathering a great interest for optoelectrical devices applications and the importance of bandgap engineering in ZnO material system is increasing. We have reported a new bandgap engineering technique using bandgap bowing of the ZnO1-xSex anion compound semiconductors. In previous work, the ZnO1-xSex bandgap bowing parameter had been obtained and the difficulty of Se incorporation in ZnO crystal was suggested. We report on the interesting Se incorporation characteristics in ZnO.

本文言語English
ホスト出版物のタイトルMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
出版社Institute of Electrical and Electronics Engineers Inc.
ページ253-254
ページ数2
ISBN(電子版)0780375815, 9780780375819
DOI
出版ステータスPublished - 2002
外部発表はい
イベント12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
継続期間: 2002 9 152002 9 20

出版物シリーズ

名前MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
国/地域United States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

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