TY - GEN
T1 - Near-field imaging spectroscopy of low density InAs/InP quantum dots
AU - Kubota, R.
AU - Mizuno, D.
AU - Saiki, T.
AU - Dupuy, E.
AU - Regreny, P.
AU - Gendry, M.
PY - 2009/10/2
Y1 - 2009/10/2
N2 - Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.
AB - Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.
UR - http://www.scopus.com/inward/record.url?scp=70349487974&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349487974&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2009.5012429
DO - 10.1109/ICIPRM.2009.5012429
M3 - Conference contribution
AN - SCOPUS:70349487974
SN - 9781424434336
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 87
EP - 90
BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Y2 - 10 May 2009 through 14 May 2009
ER -