Near-field imaging spectroscopy of low density InAs/InP quantum dots

R. Kubota, D. Mizuno, T. Saiki, E. Dupuy, P. Regreny, M. Gendry

    研究成果: Conference contribution

    抄録

    Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.

    本文言語English
    ホスト出版物のタイトルIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    ページ87-90
    ページ数4
    DOI
    出版ステータスPublished - 2009 10 2
    イベントIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
    継続期間: 2009 5 102009 5 14

    出版物シリーズ

    名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
    ISSN(印刷版)1092-8669

    Other

    OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    CountryUnited States
    CityNewport Beach, CA
    Period09/5/1009/5/14

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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