Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects

K. Nikawa, T. Saiki, S. Inoue, M. Ohtsu

研究成果: Article査読

抄録

The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The resulting NF-OBIRCH method has two advantages over the conventional OBIRCH method. (1) Its spatial resolution is higher. (2) The optical-beam-induced resistance change caused by heating can be observed when the aperture size is zero without interference from the photo current caused by electron-hole-pair generation. In the conventional OBIRCH method, the laser beam creates not only the resistance change, but also the photo current that can mask the resistance change signals.

本文言語English
ページ(範囲)883-888
ページ数6
ジャーナルMicroelectronics Reliability
38
6-8
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 安全性、リスク、信頼性、品質管理
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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