Near-field optical study of semiconductor photonic devices

T. Saiki, N. Saito, M. Ohtsu

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A novel-structured semiconductor photonic device is investigated using a near-field scanning optical microscope. By tailoring the shape of the fiber probe, high transmission and collection efficiencies are successfully achieved. Employing optimized fiber tips, multi-diagnostics of lateral p-n junctions is performed with the AFM operation. Measuring the spatially resolved photoluminescence spectra, we precisely examine the carrier distribution in the transition region of the p-n junctions. Electroluminescence imaging reveals the width and the position of the active region. The slant angle of the p-n interface is determined by applying the multiwavelength near-field photocurrent measurement. We also clarify the mechanism of the mode conversion due to the interaction between the evanescent light on a small aperture and optically dense semiconductors.

本文言語English
ページ(範囲)162-168
ページ数7
ジャーナルMaterials Science and Engineering B
48
1-2
DOI
出版ステータスPublished - 1997 8 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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