抄録
High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2291-2293 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 81 |
| 号 | 12 |
| DOI | |
| 出版ステータス | Published - 2002 9月 16 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）