Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi

研究成果: Article査読

56 被引用数 (Scopus)

抄録

High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

本文言語English
ページ(範囲)2291-2293
ページ数3
ジャーナルApplied Physics Letters
81
12
DOI
出版ステータスPublished - 2002 9月 16
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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