Near-field photoluminescence of Si-doped GaAs

Sang Kee Eah, Wonho Jhe, Toshiharu Saiki, Motoichi Ohtsu

研究成果: Article

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We have measured surface photoluminescence properties of Si-doped bulk GaAs using a near-field scanning optical microscope. An apertured fiber probe tip is used as an emitter of excitation laser as well as a collector of luminescence from GaAs. Due to the Fabry-Perot etalon effect, the excitation laser is reflected or transmitted with an oscillation period of λHe-Ne/2 as the gap between the tip and the GaAs surface varies. The luminescence from GaAs also varies with an oscillation period of λGaAs/2 due to the same etalon effect. Therefore, the intensity of luminescence light collected by the probe tip shows a beating between two oscillations of different periods. When the probe approaches the GaAs surface, the collected luminescence intensity increases due to tunneling of evanescent wave. On the other hand, when we collect the luminescence using a lens, the intensity also increases due to similar coupling of evanescent wave into propagating wave in spite of a shadowing effect of the wide metal coating.

元の言語English
ページ(範囲)450-453
ページ数4
ジャーナルOptical Review
3
発行部数6
DOI
出版物ステータスPublished - 1996 1 1
外部発表Yes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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