Near-field photoluminescence of Si-doped GaAs

Sang Kee Eah, Wonho Jhe, Toshiharu Saiki, Motoichi Ohtsu

研究成果: Article査読

抄録

We have measured surface photoluminescence properties of Si-doped bulk GaAs using a near-field scanning optical microscope. An apertured fiber probe tip is used as an emitter of excitation laser as well as a collector of luminescence from GaAs. Due to the Fabry-Perot etalon effect, the excitation laser is reflected or transmitted with an oscillation period of λ.He-Ne/2 as the gap between the tip and the GaAs surface varies. The luminescence from GaAs also varies with an oscillation period of λGaAs/2 due to the same etalon effect. Therefore, the intensity of luminescence light collected by the probe tip shows a beating between two oscillations of different periods. When the probe approaches the GaAs surface, the collected luminescence intensity increases due to tunneling of evanescent wave. On the other hand, when we collect the luminescence using a lens, the intensity also increases due to similar coupling of evanescent wave into propagating wave in spite of a shadowing effect of the wide metal coating.

本文言語English
論文番号A450
ページ(範囲)A450-A453
ジャーナルOptical Review
3
6
DOI
出版ステータスPublished - 1996 11月
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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