Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature

K. Matsuda, T. Saiki, M. Takahashi, A. Moto, S. Takagishi

研究成果: Article査読

50 被引用数 (Scopus)

抄録

We have measured the spatial distribution of the optical properties of a GaNAs (N∼0.8%) epilayer to investigate the carrier recombination mechanism at both room temperature and cryogenic temperature using a near-field scanning optical microscope. A difference between the macro and near-field photoluminescence (PL) spectra at room temperature was not observed. At low temperature, we found spatial inhomogeneity of the optical properties and sharp features in the near-field PL spectrum. These findings indicate that the dominant emission mechanism changes from recombination of delocalized carriers at room temperature to recombination of localized carriers (excitons) trapped in the local potential minimum due to compositional fluctuation at low temperature.

本文言語English
ページ(範囲)1508-1510
ページ数3
ジャーナルApplied Physics Letters
78
11
DOI
出版ステータスPublished - 2001 3 12
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル