TY - JOUR
T1 - Near-infrared nano-spectroscopy and emission energy control of semiconductor quantum dots using a phase-change material
AU - Tsumori, Nobuhiro
AU - Takahashi, Motoki
AU - Humam, Nurrul Syafawati
AU - Regreny, Phillipe
AU - Gendry, Michel
AU - Saiki, Toshiharu
PY - 2013
Y1 - 2013
N2 - We have proposed a method to achieve near-field imaging spectroscopy of single semiconductor quantum dots with high sensitivity by using an optical mask layer of a phase-change material. Sequential formation and elimination of an amorphous aperture allows imaging spectroscopy with high spatial resolution and high collection efficiency. We present numerical simulation and experimental result that show the effectiveness of this technique. Inspired by this optical mask effect, a new approach which can precisely control the emission energy of semiconductor quantum dots has been proposed. This method uses the volume expansion of a phase change material upon amorphization, which allows reversible emission energy tuning of quantum dots. A photoluminescence spectroscopy of single quantum dots and simulation were conducted to demonstrate and further explore the feasibility of this method.
AB - We have proposed a method to achieve near-field imaging spectroscopy of single semiconductor quantum dots with high sensitivity by using an optical mask layer of a phase-change material. Sequential formation and elimination of an amorphous aperture allows imaging spectroscopy with high spatial resolution and high collection efficiency. We present numerical simulation and experimental result that show the effectiveness of this technique. Inspired by this optical mask effect, a new approach which can precisely control the emission energy of semiconductor quantum dots has been proposed. This method uses the volume expansion of a phase change material upon amorphization, which allows reversible emission energy tuning of quantum dots. A photoluminescence spectroscopy of single quantum dots and simulation were conducted to demonstrate and further explore the feasibility of this method.
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U2 - 10.1088/1742-6596/471/1/012007
DO - 10.1088/1742-6596/471/1/012007
M3 - Conference article
AN - SCOPUS:84890718400
SN - 1742-6588
VL - 471
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012007
T2 - 18th Microscopy of Semiconducting Materials Conference, MSM 2013
Y2 - 7 April 2013 through 11 April 2013
ER -