Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

T. Ohmori, T. K. Goto, T. Kitajima, T. Makabe

研究成果: Article査読

36 被引用数 (Scopus)

抄録

In a pulsed 2f-CCP in CF4/Ar, the correlation between a reduction of the charging voltage at the bottom of a SiO2 hole under etching and negative charge injection to the hole was examined. A comparison of the bottom potentials of the SiO2 holes between those with exposure plasmas in pure Ar and those in CF4 made it possible to identify, as the injected charge, light electrons and massive negative ions in an electronegative plasma.

本文言語English
ページ(範囲)4637-4639
ページ数3
ジャーナルApplied Physics Letters
83
22
DOI
出版ステータスPublished - 2003 12月 1

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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