We measured the dephasing time and radiative lifetime of excitons in InAs quantum dots fabricated using the strain compensation technique. The dephasing time at 3 K was as long as 2.86ns using transient four-wave mixing measurements at an excitation wavelength of 1.468 μm. This ultralong dephasing time was due to the significant suppression of pure dephasing.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2007 9月 20|
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