抄録
We measured the dephasing time and radiative lifetime of excitons in InAs quantum dots fabricated using the strain compensation technique. The dephasing time at 3 K was as long as 2.86ns using transient four-wave mixing measurements at an excitation wavelength of 1.468 μm. This ultralong dephasing time was due to the significant suppression of pure dephasing.
本文言語 | English |
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ページ(範囲) | 6352-6354 |
ページ数 | 3 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 46 |
号 | 9 B |
DOI | |
出版ステータス | Published - 2007 9月 20 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)