Neutral-impurity scattering in isotopically engineered Ge

K. M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

研究成果: Article

20 引用 (Scopus)

抜粋

Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.

元の言語English
ページ(範囲)16995-17000
ページ数6
ジャーナルPhysical Review B
50
発行部数23
DOI
出版物ステータスPublished - 1994 1 1
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Itoh, K. M., Walukiewicz, W., Fuchs, H. D., Beeman, J. W., Haller, E. E., Farmer, J. W., & Ozhogin, V. I. (1994). Neutral-impurity scattering in isotopically engineered Ge. Physical Review B, 50(23), 16995-17000. https://doi.org/10.1103/PhysRevB.50.16995