Neutron transmutation doping of isotopically engineered Ge

K. M. Itoh, E. E. Haller, W. L. Hansen, J. W. Beeman, J. W. Farmer, A. Rudnev, A. Tikhomirov, V. I. Ozhogin

研究成果: Article査読

34 被引用数 (Scopus)

抄録

We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [ 74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[ 74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0-0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

本文言語English
ページ(範囲)2121-2123
ページ数3
ジャーナルApplied Physics Letters
64
16
DOI
出版ステータスPublished - 1994 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Neutron transmutation doping of isotopically engineered Ge」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル