New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range

S. Ohkouchi, N. Kumagai, M. Shirane, Y. Igarashi, M. Nomura, Y. Ota, S. Yorozu, S. Iwamoto, Y. Arakawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.

本文言語English
ページ(範囲)250-253
ページ数4
ジャーナルJournal of Crystal Growth
323
1
DOI
出版ステータスPublished - 2011 5 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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