We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources.
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